The ESD7181 is designed to protect voltage
sensitive components that require ultra−low capacitance from ESD and transient
voltage events. Excellent clamping capability, low capacitance, low leakage, and
fast response time make these parts ideal for ESD protection on designs where
board space is at a premium. It has industry leading capacitance linearity over
voltage making it ideal for RF applications.
Features
• Low Capacitance 0.3 pF (Typical)
• Low Clamping Voltage
• Small Body Outline Dimensions: (0.62 x 0.32
mm) − 0201
• Low Body Height: 0.3 mm
• Working Voltage: ±18.5 V
• Low Leakage < 1 nA (Typical)
• Low Insertion Loss
• Low Dynamic Resistance: < 1 W
• IEC61000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other
Applications Requiring UniqueSite and Control Change Requirements; AEC−Q101
Qualified andPPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR
Free and are RoHSCompliantTypical Applications
• RF Signal ESD Protection
• Wireless Charger
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
ESD Voltage Clamping
For sensitive circuit elements it is important
to limit the voltage that an IC will be exposed to during an ESD event to as
low a voltage as possible. The ESD clamping voltage is the voltage drop across
the ESD protection diode during an ESD event per the IEC61000−4−2 waveform.
Since theIEC61000−4−2 was written as a pass/fail spec for larger systems such
as cell phones or laptop computers it is not clearly defined in the spec how to
specify a clamping voltage at the device level. ON Semiconductor has developed
a way to examine the entire voltage waveform across the ESD protection diode
over the time domain of an ESD pulse in the form of an oscilloscope screenshot,
which can be found on the datasheets for all ESD protection diodes. For more information
on how ON Semiconductor creates these screenshots and how to interpret them
please refer toAND8307/D.
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